Produkte > VISHAY SILICONIX > SIHA14N60E-GE3
SIHA14N60E-GE3

SIHA14N60E-GE3 Vishay Siliconix

siha14n60e.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
auf Bestellung 3474 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.49 EUR
50+ 4.4 EUR
100+ 3.62 EUR
500+ 3.06 EUR
1000+ 2.6 EUR
2000+ 2.47 EUR
Mindestbestellmenge: 5
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHA14N60E-GE3 Vishay Siliconix

Description: N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V.

Weitere Produktangebote SIHA14N60E-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIHA14N60E-GE3 SIHA14N60E-GE3 Hersteller : Vishay / Siliconix siha14n60e.pdf MOSFET N-CHANNEL 600V
Produkt ist nicht verfügbar