SIHA17N80E-E3

SIHA17N80E-E3

SIHA17N80E-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 800V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)

siha17n80e.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.97 EUR

Technische Details SIHA17N80E-E3

Description: MOSFET N-CHANNEL 800V 15A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Full Pack, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc).

Preis SIHA17N80E-E3 ab 12.97 EUR bis 12.97 EUR

SIHA17N80E-E3
Hersteller: Vishay
SIHA17N80E-E3
siha17n80e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA17N80E-E3
SIHA17N80E-E3
Hersteller: Vishay Semiconductors
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
siha17n80e-1761733.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen