auf Bestellung 879 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.47 EUR |
| 10+ | 5.46 EUR |
| 50+ | 5.15 EUR |
| 100+ | 4.39 EUR |
| 250+ | 4.16 EUR |
| 500+ | 3.93 EUR |
| 1000+ | 3.17 EUR |
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Technische Details SIHA21N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 7.5A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V.
Weitere Produktangebote SIHA21N80AE-GE3 nach Preis ab 3.33 EUR bis 7.02 EUR
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SIHA21N80AE-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 800V 7.5A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V |
auf Bestellung 1001 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHA21N80AE-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHA21N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 7.5 A, 0.205 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 33W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.205ohm |
auf Bestellung 899 Stücke: Lieferzeit 14-21 Tag (e) |