SIHA6N80AE-GE3

SIHA6N80AE-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Packaging: Cut Tape (CT)

siha6n80ae.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 809 Stücke
Lieferzeit 21-28 Tag (e)
9+ 3.22 EUR
10+ 2.88 EUR
100+ 2.24 EUR
500+ 1.85 EUR

Technische Details SIHA6N80AE-GE3

Description: MOSFET E SERIES THIN-LEAD TO-220, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V, Power Dissipation (Max): 30W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-220 Full Pack, Package / Case: TO-220-3 Full Pack, Base Part Number: SIHA6.

Preis SIHA6N80AE-GE3 ab 1.85 EUR bis 4.39 EUR

SIHA6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
siha6n80ae.pdf
auf Bestellung 809 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.39 EUR
10+ 3.91 EUR
100+ 3.05 EUR
500+ 2.52 EUR
SIHA6N80AE-GE3
Hersteller: Vishay
Power MOSFET
siha6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA6N80AE-GE3
SIHA6N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 800V TO-220FP
siha6n80ae-1701802.pdf
auf Bestellung 1000 Stücke
Lieferzeit 14-28 Tag (e)
SIHA6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES THIN-LEAD TO-220
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA6
siha6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES THIN-LEAD TO-220
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA6
siha6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES THIN-LEAD TO-220
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA6
siha6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen