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SIHB100N60E-GE3

SIHB100N60E-GE3 Vishay Siliconix


sihb100n60e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 86 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.73 EUR
50+ 9.28 EUR
Mindestbestellmenge: 3
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Technische Details SIHB100N60E-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 30A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.

Weitere Produktangebote SIHB100N60E-GE3 nach Preis ab 6.08 EUR bis 11.78 EUR

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SIHB100N60E-GE3 SIHB100N60E-GE3 Hersteller : Vishay / Siliconix sihb100n60e.pdf MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
auf Bestellung 414 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.78 EUR
10+ 9.88 EUR
25+ 9.33 EUR
100+ 8.01 EUR
250+ 7.54 EUR
500+ 7.1 EUR
1000+ 6.08 EUR
Mindestbestellmenge: 5
SIHB100N60E-GE3 SIHB100N60E-GE3 Hersteller : Vishay sihb100n60e.pdf Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
SIHB100N60E-GE3 Hersteller : VISHAY sihb100n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 73A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHB100N60E-GE3 Hersteller : VISHAY sihb100n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 73A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar