auf Bestellung 827 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 8.79 EUR |
| 10+ | 7.7 EUR |
| 25+ | 7.44 EUR |
| 100+ | 6.45 EUR |
| 250+ | 6.29 EUR |
| 500+ | 5.9 EUR |
| 1000+ | 5.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHB125N60EF-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 25A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V.
Weitere Produktangebote SIHB125N60EF-GE3 nach Preis ab 5.26 EUR bis 10.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHB125N60EF-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 25A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V |
auf Bestellung 2720 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
 |
SIHB125N60EF-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHB125N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.109 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 179W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.109ohm |
auf Bestellung 709 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
 |
SIHB125N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
|||||||||||||
| SIHB125N60EF-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.125Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| SIHB125N60EF-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.125Ω |
Produkt ist nicht verfügbar |