SIHB16N50C-E3

SIHB16N50C-E3

SIHB16N50C-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

sihp16n5.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 990 Stücke
Lieferzeit 21-28 Tag (e)
2+ 17.29 EUR
10+ 15.52 EUR
100+ 12.72 EUR
500+ 10.83 EUR

Technische Details SIHB16N50C-E3

Description: MOSFET N-CH 500V 16A D2PAK, Drain to Source Voltage (Vdss): 500V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIHB16, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D²PAK (TO-263), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 250W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc).

Preis SIHB16N50C-E3 ab 10.83 EUR bis 17.55 EUR

SIHB16N50C-E3
SIHB16N50C-E3
Hersteller: Vishay Semiconductors
MOSFET N-Channel 500V
sihp16n5-1761683.pdf
auf Bestellung 925 Stücke
Lieferzeit 14-28 Tag (e)
3+ 17.55 EUR
10+ 15.81 EUR
25+ 14.95 EUR
100+ 12.95 EUR
SIHB16N50C-E3
SIHB16N50C-E3
Hersteller: Vishay
Trans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK
sihp16n5.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB16N50C-E3
SIHB16N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHB16
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
sihp16n5.pdf
auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
SIHB16N50C-E3
SIHB16N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
sihp16n5.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen