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SIHB17N80E-T1-GE3 Vishay Siliconix


sihb17n80e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+7.15 EUR
Mindestbestellmenge: 800
Produktrezensionen
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Technische Details SIHB17N80E-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 800V 15A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V.

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SIHB17N80E-T1-GE3 Hersteller : Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.83 EUR
10+ 9.94 EUR
100+ 8.04 EUR
Mindestbestellmenge: 3
SIHB17N80E-T1-GE3 SIHB17N80E-T1-GE3 Hersteller : Vishay / Siliconix sihb17n80e.pdf MOSFET E Series Power
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