SIHB22N60AE-GE3

SIHB22N60AE-GE3

SIHB22N60AE-GE3

Hersteller: Vishay
Commercial High Voltage Power MOSFET
sihb22n60ae.pdf
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Technische Details SIHB22N60AE-GE3

Description: MOSFET N-CH 600V 20A D2PAK, Power Dissipation (Max): 179W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: TO-263 (D²Pak), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Base Part Number: SIHB22, Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tube, Manufacturer: Vishay Siliconix.

Preis SIHB22N60AE-GE3 ab 0 EUR bis 0 EUR

SIHB22N60AE-GE3
SIHB22N60AE-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
sihg80n60e-1768818.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60AE-GE3
SIHB22N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A D2PAK
Power Dissipation (Max): 179W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
sihb22n60ae.pdf
auf Bestellung 700 Stücke
Lieferzeit 21-28 Tag (e)