SIHB23N60E-GE3

SIHB23N60E-GE3

SIHB23N60E-GE3

Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
sihb23n60e-1842948.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 19 Stücke
Lieferzeit 14-28 Tag (e)
5+ 10.69 EUR
10+ 9.62 EUR
25+ 9.54 EUR
100+ 7.77 EUR

Technische Details SIHB23N60E-GE3

Description: MOSFET N-CH 600V 23A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.

Preis SIHB23N60E-GE3 ab 7.77 EUR bis 10.74 EUR

SIHB23N60E-GE3
SIHB23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
sihb23n60e.pdf
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.74 EUR
10+ 9.65 EUR
SIHB23N60E-GE3
SIHB23N60E-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
sihb23n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB23N60E-GE3
SIHB23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
sihb23n60e.pdf
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)