SIHB23N60E-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 19 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 19 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIHB23N60E-GE3
Description: MOSFET N-CH 600V 23A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.
Preis SIHB23N60E-GE3 ab 7.77 EUR bis 10.74 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 600V 23A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube 
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auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 600V 23A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Tape & Reel (TR)
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auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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