SIHB24N80AE-GE3 Vishay / Siliconix
auf Bestellung 467 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 7.96 EUR |
| 10+ | 6.73 EUR |
| 100+ | 5.62 EUR |
| 250+ | 5.43 EUR |
| 500+ | 4.99 EUR |
| 1000+ | 4.26 EUR |
| 2500+ | 4.11 EUR |
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Technische Details SIHB24N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 21A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V.
Weitere Produktangebote SIHB24N80AE-GE3 nach Preis ab 4.96 EUR bis 8.22 EUR
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SIHB24N80AE-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 800V 21A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V |
auf Bestellung 584 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIHB24N80AE-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 21A |
Produkt ist nicht verfügbar |
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| SIHB24N80AE-GE3 | Hersteller : VISHAY |
SIHB24N80AE-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |