SIHB28N60EF-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 1246 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 14.33 EUR |
| 50+ | 11.36 EUR |
| 100+ | 9.73 EUR |
| 500+ | 8.65 EUR |
| 1000+ | 7.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHB28N60EF-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 28A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V.
Weitere Produktangebote SIHB28N60EF-GE3 nach Preis ab 7.41 EUR bis 14.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHB28N60EF-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 950 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
SIHB28N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SIHB28N60EF-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SIHB28N60EF-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |