SIHD12N50E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 550V 10.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 2993 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.16 EUR |
| 10+ | 3.44 EUR |
| 100+ | 2.74 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 1.97 EUR |
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Technische Details SIHD12N50E-GE3 Vishay Siliconix
Description: MOSFET N-CH 550V 10.5A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V.
Weitere Produktangebote SIHD12N50E-GE3 nach Preis ab 2.11 EUR bis 4.19 EUR
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SIHD12N50E-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 5007 Stücke: Lieferzeit 14-28 Tag (e) |
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| SIHD12N50E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 21A Power dissipation: 114W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| SIHD12N50E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 21A Power dissipation: 114W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |