Produkte > VISHAY / SILICONIX > SIHD14N60E-BE3
SIHD14N60E-BE3

SIHD14N60E-BE3 Vishay / Siliconix


Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 600V
auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.36 EUR
12+ 4.34 EUR
100+ 3.54 EUR
250+ 3.28 EUR
500+ 2.96 EUR
1000+ 2.49 EUR
3000+ 2.47 EUR
Mindestbestellmenge: 10
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Technische Details SIHD14N60E-BE3 Vishay / Siliconix

Description: MOSFET N-CH 600V 13A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V.

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SIHD14N60E-BE3 SIHD14N60E-BE3 Hersteller : Vishay Siliconix Description: MOSFET N-CH 600V 13A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
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