SiHD14N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
auf Bestellung 311 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.3 EUR |
| 75+ | 4.26 EUR |
| 150+ | 3.5 EUR |
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Technische Details SiHD14N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 13A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V.
Weitere Produktangebote SiHD14N60E-GE3 nach Preis ab 2.46 EUR bis 5.33 EUR
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SiHD14N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
auf Bestellung 483 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHD14N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK |
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| SiHD14N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 32A Power dissipation: 147W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SiHD14N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 32A Power dissipation: 147W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |