SIHD2N80AE-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Drain current: 1.8A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Gate charge: 10.5nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.65 EUR |
| 32+ | 2.23 EUR |
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Technische Details SIHD2N80AE-GE3 VISHAY
Description: MOSFET N-CH 800V 2.9A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V.
Weitere Produktangebote SIHD2N80AE-GE3 nach Preis ab 1.19 EUR bis 2.83 EUR
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SIHD2N80AE-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W Case: DPAK; TO252 Mounting: SMD Drain current: 1.8A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 2.5Ω Pulsed drain current: 3.6A Power dissipation: 62.5W Gate charge: 10.5nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHD2N80AE-GE3 | Hersteller : Vishay / Siliconix |
MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK) |
auf Bestellung 2700 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHD2N80AE-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SIHD2N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 2.9A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V |
Produkt ist nicht verfügbar |