SIHD2N80E-GE3 Vishay Semiconductors

Description: MOSFET N-CH 800V 2.8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.