SIHD2N80E-GE3

SIHD2N80E-GE3

SIHD2N80E-GE3

Hersteller: Vishay Semiconductors
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
VISH_S_A0010831502_1-2571379.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 647 Stücke
Lieferzeit 14-28 Tag (e)
15+ 3.51 EUR
17+ 3.17 EUR
100+ 2.46 EUR
500+ 2.03 EUR

Technische Details SIHD2N80E-GE3

Description: MOSFET N-CH 800V 2.8A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.

Preis SIHD2N80E-GE3 ab 2.03 EUR bis 3.59 EUR

SIHD2N80E-GE3
SIHD2N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
sihd2n80e.pdf
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.59 EUR
10+ 3.2 EUR
SIHD2N80E-GE3
SIHD2N80E-GE3
Hersteller: Vishay
E Series Power MOSFET
sihd2n80e.pdf
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