SIHD3N50D-E3 Vishay / Siliconix
auf Bestellung 3105 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.15 EUR |
| 28+ | 1.88 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.92 EUR |
| 3000+ | 0.78 EUR |
| 6000+ | 0.75 EUR |
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Technische Details SIHD3N50D-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 3A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V.
Weitere Produktangebote SIHD3N50D-E3
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Verfügbarkeit |
Preis ohne MwSt |
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SIHD3N50D-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SIHD3N50D-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V |
Produkt ist nicht verfügbar |