SIHD3N50D-E3

SIHD3N50D-E3

SIHD3N50D-E3

Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
VISH_S_A0012662111_1-2572482.pdf
verfügbar/auf Bestellung
auf Bestellung 95 Stücke
Lieferzeit 14-28 Tag (e)

22+ 2.37 EUR
25+ 2.1 EUR
100+ 1.61 EUR
500+ 1.27 EUR

Technische Details SIHD3N50D-E3

Description: MOSFET N-CH 500V 3A DPAK, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 69W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.

Preis SIHD3N50D-E3 ab 1.27 EUR bis 2.37 EUR

SIHD3N50D-E3
SIHD3N50D-E3
Hersteller: Vishay
Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK
sihd3n50d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD3N50D-E3
SIHD3N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3A DPAK
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
sihd3n50d.pdf
auf Bestellung 2948 Stücke
Lieferzeit 21-28 Tag (e)