SIHD3N50D-E3
verfügbar/auf Bestellung
auf Bestellung 95 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 95 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIHD3N50D-E3
Description: MOSFET N-CH 500V 3A DPAK, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 69W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Preis SIHD3N50D-E3 ab 1.27 EUR bis 2.37 EUR
 Hersteller: Vishay Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK 
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 500V 3A DPAK Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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auf Bestellung 2948 Stücke Lieferzeit 21-28 Tag (e) |
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