SIHD6N80AE-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2953 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2953 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIHD6N80AE-GE3
Description: MOSFET E SERIES DPAK TO-252, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drain to Source Voltage (Vdss): 800V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Base Part Number: SIHD6, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: D-PAK (TO-252AA), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 62.5W (Tc).
Preis SIHD6N80AE-GE3 ab 2.08 EUR bis 3.59 EUR
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SIHD6N80AE-GE3 Hersteller: Vishay Power MOSFET 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 800V 5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Part Status: Active Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube
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auf Bestellung 2001 Stücke Lieferzeit 21-28 Tag (e) |
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SIHD6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET E SERIES DPAK TO-252 Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: SIHD6 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHD6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET E SERIES DPAK TO-252 Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIHD6 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIHD6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET E SERIES DPAK TO-252 Base Part Number: SIHD6 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT)
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auf Bestellung 2999 Stücke Lieferzeit 21-28 Tag (e) |
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