SIHD6N80AE-GE3

SIHD6N80AE-GE3

SIHD6N80AE-GE3

Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 800V DPAK (TO-252)
sihd6n80ae-1768950.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2953 Stücke
Lieferzeit 14-28 Tag (e)
15+ 3.59 EUR
17+ 3.22 EUR
100+ 2.51 EUR
500+ 2.08 EUR

Technische Details SIHD6N80AE-GE3

Description: MOSFET E SERIES DPAK TO-252, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drain to Source Voltage (Vdss): 800V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Base Part Number: SIHD6, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: D-PAK (TO-252AA), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 62.5W (Tc).

Preis SIHD6N80AE-GE3 ab 2.08 EUR bis 3.59 EUR

SIHD6N80AE-GE3
Hersteller: Vishay
Power MOSFET
sihd6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N80AE-GE3
SIHD6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
sihd6n80ae.pdf
auf Bestellung 2001 Stücke
Lieferzeit 21-28 Tag (e)
SIHD6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES DPAK TO-252
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHD6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
sihd6n80ae.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIHD6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES DPAK TO-252
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHD6
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
sihd6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES DPAK TO-252
Base Part Number: SIHD6
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
sihd6n80ae.pdf
auf Bestellung 2999 Stücke
Lieferzeit 21-28 Tag (e)