SIHF065N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 40A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 943 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.81 EUR |
| 50+ | 12.61 EUR |
| 100+ | 11.29 EUR |
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Technische Details SIHF065N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V.
Weitere Produktangebote SIHF065N60E-GE3 nach Preis ab 9 EUR bis 15.91 EUR
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auf Bestellung 856 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHF065N60E-GE3 | Hersteller : Vishay |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 116A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| SIHF065N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 116A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced |
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