SIHF12N50C-E3

SIHF12N50C-E3

SIHF12N50C-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V

sihp12n5.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 999 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.04 EUR
10+ 12.61 EUR
100+ 10.33 EUR
500+ 8.8 EUR

Technische Details SIHF12N50C-E3

Description: MOSFET N-CH 500V 12A TO220, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.

Preis SIHF12N50C-E3 ab 8.8 EUR bis 14.04 EUR

SIHF12N50C-E3
SIHF12N50C-E3
Hersteller: Vishay
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220 Full-Pak
sihp12n5.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF12N50C-E3
SIHF12N50C-E3
Hersteller: Vishay Semiconductors
MOSFET N-Channel 500V
sihp12n5-1768807.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen