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SIHF16N50C-E3


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Technische Details SIHF16N50C-E3

Description: MOSFET N-CH 500V 16A TO220, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.

Weitere Produktangebote SIHF16N50C-E3

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SIHF16N50C-E3 SIHF16N50C-E3 Hersteller : Vishay sihp16n5.pdf Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220FP
Produkt ist nicht verfügbar
SIHF16N50C-E3 SIHF16N50C-E3 Hersteller : Vishay Siliconix sihp16n5.pdf Description: MOSFET N-CH 500V 16A TO220
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
SIHF16N50C-E3 SIHF16N50C-E3 Hersteller : Vishay / Siliconix sihp16n5.pdf MOSFET N-Channel 500V
Produkt ist nicht verfügbar