Technische Details SIHF28N60EF-GE3 Vishay
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 18A, Pulsed drain current: 75A, Power dissipation: 39W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 123mΩ, Mounting: THT, Gate charge: 0.12µC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF28N60EF-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHF28N60EF-GE3 | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHF28N60EF-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 28A TO220 |
Produkt ist nicht verfügbar |
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SIHF28N60EF-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK |
Produkt ist nicht verfügbar |
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| SIHF28N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |