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SIHFL110TR-BE3

SIHFL110TR-BE3 Vishay Siliconix


sihfl110.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2246 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.24 EUR
100+ 0.86 EUR
500+ 0.67 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 18
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Technische Details SIHFL110TR-BE3 Vishay Siliconix

Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.

Weitere Produktangebote SIHFL110TR-BE3 nach Preis ab 0.44 EUR bis 1.47 EUR

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Preis ohne MwSt
SIHFL110TR-BE3 SIHFL110TR-BE3 Hersteller : Vishay / Siliconix sihfl110.pdf MOSFET 100V N-CH
auf Bestellung 27989 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.47 EUR
42+ 1.25 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
2500+ 0.47 EUR
10000+ 0.44 EUR
Mindestbestellmenge: 36
SIHFL110TR-BE3 SIHFL110TR-BE3 Hersteller : Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2246 Stücke:
Lieferzeit 21-28 Tag (e)
SIHFL110TR-BE3 SIHFL110TR-BE3 Hersteller : Vishay sihfl110.pdf Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
SIHFL110TR-BE3 Hersteller : Vishay sihfl110.pdf Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar