Technische Details SIHFR9014-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W, Pulsed drain current: -20A, Power dissipation: 25W, Gate charge: 12nC, Polarisation: unipolar, Drain current: -3.2A, Kind of channel: enhanced, Drain-source voltage: -60V, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: DPAK; TO252, On-state resistance: 0.5Ω, Gate-source voltage: ±20V, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR9014-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHFR9014-GE3 | Hersteller : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFR9014-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 5.1A DPAK |
Produkt ist nicht verfügbar |
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SIHFR9014-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -60V Vds 20V Vgs DPAK (TO-252) |
Produkt ist nicht verfügbar |
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| SIHFR9014-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Pulsed drain current: -20A Power dissipation: 25W Gate charge: 12nC Polarisation: unipolar Drain current: -3.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.5Ω Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |