SIHFZ48RS-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 190W
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 110nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
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Technische Details SIHFZ48RS-GE3 VISHAY
Description: MOSFET N-CH 60V 50A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote SIHFZ48RS-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFZ48RS-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |
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SIHFZ48RS-GE3 | Hersteller : Vishay / Siliconix |
 MOSFET 60V Vds 20V Vgs D2PAK (TO-263) |
Produkt ist nicht verfügbar |
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| SIHFZ48RS-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 190W Drain-source voltage: 60V Drain current: 50A On-state resistance: 18mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 110nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 290A |
Produkt ist nicht verfügbar |