SIHG018N60E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 99A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 524W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V
Description: MOSFET N-CH 600V 99A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 524W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V
auf Bestellung 927 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 39.73 EUR |
25+ | 32.17 EUR |
100+ | 30.28 EUR |
500+ | 27.44 EUR |
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Technische Details SIHG018N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 99A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 99A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V, Power Dissipation (Max): 524W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V.
Weitere Produktangebote SIHG018N60E-GE3 nach Preis ab 27.61 EUR bis 40.01 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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SIHG018N60E-GE3 | Hersteller : Vishay Semiconductors | MOSFET 600V Vds 30V Vgs TO-247AC |
auf Bestellung 808 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG018N60E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHG018N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 99 A, 0.021 ohm, TO-247AC, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 99 Qualifikation: - Verlustleistung Pd: 524 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 524 Bauform - Transistor: TO-247AC Anzahl der Pins: 3 Produktpalette: E Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.021 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.021 SVHC: Lead (19-Jan-2021) |
auf Bestellung 764 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG018N60E-GE3 | Hersteller : Vishay | E Series Power MOSFET TO247AC, 39 m @ 10V |
Produkt ist nicht verfügbar |
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SIHG018N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 63A Pulsed drain current: 325A Power dissipation: 524W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG018N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 63A; Idm: 325A; 524W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 63A Pulsed drain current: 325A Power dissipation: 524W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |