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SIHG026N60EF-GE3

SIHG026N60EF-GE3 Vishay Siliconix


sihg026n60ef.pdf Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
auf Bestellung 500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+33.02 EUR
10+ 29.08 EUR
100+ 25.15 EUR
500+ 22.79 EUR
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Technische Details SIHG026N60EF-GE3 Vishay Siliconix

Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V, Power Dissipation (Max): 521W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V.

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SIHG026N60EF-GE3 Hersteller : Vishay sihg026n60ef.pdf MOSFET N-CHANNEL 600V
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