SIHG065N60E-GE3 Vishay Semiconductors
auf Bestellung 3106 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.63 EUR |
| 10+ | 15.55 EUR |
| 25+ | 12.64 EUR |
| 100+ | 11.44 EUR |
| 250+ | 11.41 EUR |
| 500+ | 10.11 EUR |
| 1000+ | 9.31 EUR |
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Technische Details SIHG065N60E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 40A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V.
Weitere Produktangebote SIHG065N60E-GE3 nach Preis ab 10.75 EUR bis 17.08 EUR
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SIHG065N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 40A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
auf Bestellung 630 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHG065N60E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHG065N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 40 A, 0.057 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 250W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.057ohm |
auf Bestellung 822 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG065N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG065N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 116A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHG065N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 116A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |