SIHG11N80AE-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 8A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Description: MOSFET N-CH 800V 8A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.4 EUR |
10+ | 5.3 EUR |
100+ | 4.22 EUR |
500+ | 3.57 EUR |
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Technische Details SIHG11N80AE-GE3 Vishay Siliconix
Description: MOSFET N-CH 800V 8A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V.
Weitere Produktangebote SIHG11N80AE-GE3 nach Preis ab 2.89 EUR bis 6.4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIHG11N80AE-GE3 | Hersteller : Vishay / Siliconix | MOSFET 800V N-CH MOSFET E-SERIES PWR |
auf Bestellung 4985 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG11N80AE-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG11N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 22A Power dissipation: 78W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG11N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 22A Power dissipation: 78W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |