SIHG14N50D-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
auf Bestellung 490 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.59 EUR |
| 10+ | 6.37 EUR |
| 100+ | 5.15 EUR |
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Technische Details SIHG14N50D-GE3 Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V.
Weitere Produktangebote SIHG14N50D-GE3 nach Preis ab 3.85 EUR bis 7.64 EUR
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SIHG14N50D-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 500V Vds 30V Vgs TO-247AC |
auf Bestellung 372 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG14N50D-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHG14N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 14 A, 0.32 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 208W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.32ohm |
auf Bestellung 683 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG14N50D-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG14N50D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; Idm: 38A; 208W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 38A Power dissipation: 208W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHG14N50D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; Idm: 38A; 208W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 38A Power dissipation: 208W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |