SIHG16N50C-E3 Vishay Semiconductors
auf Bestellung 302 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 10.89 EUR |
| 10+ | 9.15 EUR |
| 100+ | 7.41 EUR |
| 500+ | 6.21 EUR |
| 1000+ | 5.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHG16N50C-E3 Vishay Semiconductors
Description: MOSFET N-CH 500V 16A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote SIHG16N50C-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SIHG16N50C-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
|
| SIHG16N50C-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 40A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
SIHG16N50C-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
|
 |
SIHG16N50C-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 16A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
|
| SIHG16N50C-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 40A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |