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SIHG17N80AEF-GE3

SIHG17N80AEF-GE3 Vishay Siliconix


sihg17n80aef.pdf Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 296 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.41 EUR
10+ 6.23 EUR
100+ 5.04 EUR
Mindestbestellmenge: 4
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Technische Details SIHG17N80AEF-GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V.

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SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Hersteller : Vishay / Siliconix sihg17n80aef.pdf MOSFET N-CHANNEL 800V
auf Bestellung 1444 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.46 EUR
10+ 6.29 EUR
25+ 5.85 EUR
100+ 5.07 EUR
250+ 5.02 EUR
500+ 4.84 EUR
1000+ 4.47 EUR
Mindestbestellmenge: 7
SIHG17N80AEF-GE3 Hersteller : Vishay sihg17n80aef.pdf Trans MOSFET N-CH 800V 15A Tube
Produkt ist nicht verfügbar
SIHG17N80AEF-GE3 Hersteller : VISHAY sihg17n80aef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHG17N80AEF-GE3 Hersteller : VISHAY sihg17n80aef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar