auf Bestellung 676 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.13 EUR |
10+ | 9.36 EUR |
25+ | 7.7 EUR |
100+ | 6.84 EUR |
250+ | 6.63 EUR |
500+ | 6.01 EUR |
1000+ | 5.67 EUR |
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Technische Details SIHG21N80AE-GE3 Vishay Semiconductors
Description: MOSFET N-CH 800V 17.4A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V.
Weitere Produktangebote SIHG21N80AE-GE3 nach Preis ab 7.69 EUR bis 11.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHG21N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 17.4A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V |
auf Bestellung 495 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHG21N80AE-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 800V 17.4A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG21N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG21N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |