auf Bestellung 354 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.28 EUR |
10+ | 9.49 EUR |
25+ | 8.94 EUR |
100+ | 7.7 EUR |
250+ | 7.25 EUR |
500+ | 6.55 EUR |
1000+ | 5.82 EUR |
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Technische Details SIHG22N50D-GE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 22A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V.
Weitere Produktangebote SIHG22N50D-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIHG22N50D-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG22N50D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 67A Power dissipation: 315W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG22N50D-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 22A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V |
Produkt ist nicht verfügbar |
||
SIHG22N50D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 67A Power dissipation: 315W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |