Produkte > VISHAY SILICONIX > SIHG22N60AEL-GE3
SIHG22N60AEL-GE3

SIHG22N60AEL-GE3 Vishay Siliconix

SIHG22N60AEL.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
auf Bestellung 49 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.27 EUR
25+ 8.15 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHG22N60AEL-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 21A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V.

Weitere Produktangebote SIHG22N60AEL-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIHG22N60AEL-GE3 SIHG22N60AEL-GE3 Hersteller : Vishay / Siliconix SIHG22N60AEL.pdf MOSFET 600V Vds 30V Vgs TO-247AC
Produkt ist nicht verfügbar