SiHG23N60E-GE3 Vishay Semiconductors
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.55 EUR |
| 10+ | 5.72 EUR |
| 100+ | 4.63 EUR |
| 500+ | 4.12 EUR |
| 1000+ | 3.29 EUR |
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Technische Details SiHG23N60E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 23A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V.
Weitere Produktangebote SiHG23N60E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHG23N60E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SiHG23N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 23A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V |
Produkt ist nicht verfügbar |