SIHG32N50D-E3

SIHG32N50D-E3 Vishay Semiconductors


sihg32n50d.pdf Hersteller: Vishay Semiconductors
MOSFET 500V Vds 30V Vgs TO-247AC
auf Bestellung 480 Stücke:

Lieferzeit 214-228 Tag (e)
Anzahl Preis ohne MwSt
5+12.25 EUR
10+ 10.27 EUR
25+ 9.7 EUR
100+ 8.32 EUR
250+ 7.83 EUR
500+ 7.38 EUR
1000+ 6.97 EUR
Mindestbestellmenge: 5
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Technische Details SIHG32N50D-E3 Vishay Semiconductors

Description: MOSFET N-CH 500V 30A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V.

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SIHG32N50D-E3 SIHG32N50D-E3 Hersteller : Vishay sihg32n50d.pdf Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AC
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SIHG32N50D-E3 SIHG32N50D-E3 Hersteller : Vishay Siliconix sihg32n50d.pdf Description: MOSFET N-CH 500V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Produkt ist nicht verfügbar