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SIHG73N60AEL-GE3

SIHG73N60AEL-GE3 Vishay Siliconix

SIHG73N60AEL.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 69A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 36.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6709 pF @ 100 V
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+29.15 EUR
10+ 25.68 EUR
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Technische Details SIHG73N60AEL-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 69A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 36.5A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6709 pF @ 100 V.

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SIHG73N60AEL-GE3 SIHG73N60AEL-GE3 Hersteller : Vishay / Siliconix SIHG73N60AEL.pdf MOSFET 600V Vds 30V Vgs TO-247AC
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