SIHH11N60EF-T1-GE3

SIHH11N60EF-T1-GE3

SIHH11N60EF-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
sihh11n60ef-1768846.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2493 Stücke
Lieferzeit 14-28 Tag (e)

6+ 9.57 EUR
10+ 8.66 EUR
25+ 8.19 EUR
100+ 7.28 EUR

Technische Details SIHH11N60EF-T1-GE3

Description: MOSFET N-CH 600V 11A POWERPAK8X8, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIHH11, Package / Case: 8-PowerTDFN, Supplier Device Package: PowerPAK® 8 x 8, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Power Dissipation (Max): 114W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel.

Preis SIHH11N60EF-T1-GE3 ab 5.72 EUR bis 10.09 EUR

SIHH11N60EF-T1-GE3
SIHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
sihh11n60ef.pdf
auf Bestellung 1857 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.09 EUR
10+ 9.07 EUR
100+ 7.43 EUR
500+ 6.32 EUR
1000+ 5.72 EUR
SIHH11N60EF-T1-GE3
SIHH11N60EF-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 11A 4-Pin PowerPAK EP T/R
sihh11n60ef.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N60EF-T1-GE3
SIHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A POWERPAK8X8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH11
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
sihh11n60ef.pdf
auf Bestellung 3012 Stücke
Lieferzeit 21-28 Tag (e)
SIHH11N60EF-T1-GE3
SIHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
sihh11n60ef.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen