Produkte > VISHAY SILICONIX > SiHH11N60EF-T1-GE3
SiHH11N60EF-T1-GE3

SiHH11N60EF-T1-GE3 Vishay Siliconix


sihh11n60ef.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 1825 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.18 EUR
10+ 7.7 EUR
100+ 6.23 EUR
500+ 5.54 EUR
1000+ 4.74 EUR
Mindestbestellmenge: 3
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Technische Details SiHH11N60EF-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 11A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V.

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SiHH11N60EF-T1-GE3 Hersteller : VISHAY sihh11n60ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 27A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 27A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 357mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Hersteller : Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Produkt ist nicht verfügbar
SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Hersteller : Vishay / Siliconix sihh11n60ef.pdf MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Produkt ist nicht verfügbar
SiHH11N60EF-T1-GE3 Hersteller : VISHAY sihh11n60ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 27A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 27A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 357mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar