SIHH14N65E-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SIHH14N65E-T1-GE3
Description: MOSFET N-CH 650V 15A PWRPAK 8X8, FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 8 x 8, Package / Case: 8-PowerTDFN, Base Part Number: SIHH14, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 156W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide).
Preis SIHH14N65E-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 
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auf Bestellung 2940 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 650V 15A PWRPAK 8X8 FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN Base Part Number: SIHH14 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 156W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide)
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auf Bestellung 5961 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8 Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8 Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V
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auf Bestellung 2926 Stücke Lieferzeit 21-28 Tag (e) |
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