SIHH14N65E-T1-GE3

SIHH14N65E-T1-GE3

SIHH14N65E-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 650V 15A 4-Pin PowerPAK EP T/R
sihh14n65e.pdf
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Technische Details SIHH14N65E-T1-GE3

Description: MOSFET N-CH 650V 15A PWRPAK 8X8, FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 8 x 8, Package / Case: 8-PowerTDFN, Base Part Number: SIHH14, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 156W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide).

Preis SIHH14N65E-T1-GE3 ab 0 EUR bis 0 EUR

SIHH14N65E-T1-GE3
SIHH14N65E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
sihh14n65e-1768814.pdf
auf Bestellung 2940 Stücke
Lieferzeit 14-28 Tag (e)
SIHH14N65E-T1-GE3
SIHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PWRPAK 8X8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH14
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
sihh14n65e.pdf
auf Bestellung 5961 Stücke
Lieferzeit 21-28 Tag (e)
SIHH14N65E-T1-GE3
SIHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
sihh14n65e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH14N65E-T1-GE3
SIHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
sihh14n65e.pdf
auf Bestellung 2926 Stücke
Lieferzeit 21-28 Tag (e)