SIHH14N65E-T1-GE3

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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SIHH14N65E-T1-GE3
Description: MOSFET N-CH 650V 15A PWRPAK 8X8, FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 8 x 8, Package / Case: 8-PowerTDFN, Base Part Number: SIHH14, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 156W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide).
Preis SIHH14N65E-T1-GE3 ab 0 EUR bis 0 EUR
SIHH14N65E-T1-GE3 Hersteller: Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 ![]() |
auf Bestellung 2940 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SIHH14N65E-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 650V 15A PWRPAK 8X8 FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN Base Part Number: SIHH14 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 156W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) ![]() |
auf Bestellung 5961 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIHH14N65E-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8 Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIHH14N65E-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8 Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V ![]() |
auf Bestellung 2926 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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