SIHH180N60E-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIHH180N60E-T1-GE3
Description: MOSFET N-CH PPAK 8X8, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 114W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 100V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Base Part Number: SIHH180, Package / Case: 8-PowerTDFN, Supplier Device Package: PowerPAK® 8 x 8.
Preis SIHH180N60E-T1-GE3 ab 10.06 EUR bis 13.65 EUR
 Hersteller: Vishay Trans MOSFET N-CH 600V 19A 4-Pin PowerPAK EP T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH PPAK 8X8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 114W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Base Part Number: SIHH180 Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 600V 19A PPAK 8 X 8 Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 600V 19A PPAK 8 X 8 Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 114W (Tc)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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