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SiHH20N50E-T1-GE3

SiHH20N50E-T1-GE3 Vishay / Siliconix


sihh20n50e.pdf Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs PowerPAK 8 x 8
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10+ 9.67 EUR
100+ 7.83 EUR
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1000+ 5.88 EUR
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Technische Details SiHH20N50E-T1-GE3 Vishay / Siliconix

Description: MOSFET N-CH 500V 22A PPAK 8 X 8, Packaging: Tube, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V, Power Dissipation (Max): 174W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V.

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SIHH20N50E-T1-GE3 SIHH20N50E-T1-GE3 Hersteller : Vishay doc91847.pdf Trans MOSFET N-CH 500V 22A 4-Pin PowerPAK EP
Produkt ist nicht verfügbar
SiHH20N50E-T1-GE3 Hersteller : VISHAY sihh20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SiHH20N50E-T1-GE3 SiHH20N50E-T1-GE3 Hersteller : Vishay Siliconix sihh20n50e.pdf Description: MOSFET N-CH 500V 22A PPAK 8 X 8
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V
Produkt ist nicht verfügbar
SiHH20N50E-T1-GE3 Hersteller : VISHAY sihh20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar