SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V

sihh24n65e.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 821 Stücke
Lieferzeit 21-28 Tag (e)
2+ 18.17 EUR
10+ 16.41 EUR
100+ 13.59 EUR
500+ 11.83 EUR

Technische Details SIHH24N65E-T1-GE3

Description: MOSFET N-CHAN 650V 23A POWERPAK, Base Part Number: SIHH24, Package / Case: 8-PowerTDFN, Supplier Device Package: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 202W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2814pF @ 100V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active.

Preis SIHH24N65E-T1-GE3 ab 11.83 EUR bis 18.17 EUR

SIHH24N65E-T1-GE3
SIHH24N65E-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 650V 23A 4-Pin PowerPAK EP T/R
sihh24n65e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH24N65E-T1-GE3
SIHH24N65E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
sihh24n65e-1768847.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH24N65E-T1-GE3
SIHH24N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 650V 23A POWERPAK
Base Part Number: SIHH24
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2814pF @ 100V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
sihh24n65e.pdf
auf Bestellung 3977 Stücke
Lieferzeit 21-28 Tag (e)
SIHH24N65E-T1-GE3
SIHH24N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
sihh24n65e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen