SiHH24N65E-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details SiHH24N65E-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8, Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 202W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SiHH24N65E-T1-GE3
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SiHH24N65E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 650V 23A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V |
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SiHH24N65E-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs PowerPAK 8 x 8 |
Produkt ist nicht verfügbar |
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| SiHH24N65E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 58A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 58A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |