SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN

sihh26n60e.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.98 EUR
10+ 13.46 EUR

Technische Details SIHH26N60E-T1-GE3

Description: MOSFET N-CH 600V 25A POWERPAK8X8, Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIHH26, Package / Case: 8-PowerTDFN, Supplier Device Package: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 202W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 100V, Vgs (Max): ±30V.

Preis SIHH26N60E-T1-GE3 ab 11.26 EUR bis 15.26 EUR

SIHH26N60E-T1-GE3
SIHH26N60E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
sihh26n60e-1768636.pdf
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
4+ 15.26 EUR
10+ 13.73 EUR
25+ 13.31 EUR
100+ 11.26 EUR
SIHH26N60E-T1-GE3
SIHH26N60E-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 25A 4-Pin PowerPAK EP T/R
sihh26n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH26N60E-T1-GE3
SIHH26N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A POWERPAK8X8
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH26
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 100V
Vgs (Max): ±30V
sihh26n60e.pdf
auf Bestellung 3119 Stücke
Lieferzeit 21-28 Tag (e)
SIHH26N60E-T1-GE3
SIHH26N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
sihh26n60e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen