SIHH26N60E-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 25A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
auf Bestellung 5801 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 12.97 EUR |
| 10+ | 10.88 EUR |
| 100+ | 8.8 EUR |
| 500+ | 7.82 EUR |
| 1000+ | 6.7 EUR |
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Technische Details SIHH26N60E-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 25A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V.
Weitere Produktangebote SIHH26N60E-T1-GE3 nach Preis ab 6.73 EUR bis 13.05 EUR
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SIHH26N60E-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHH26N60E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 25A 4-Pin PowerPAK EP T/R |
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| SIHH26N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 50A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHH26N60E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 25A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHH26N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 50A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |