Produkte > VISHAY SILICONIX > SIHJ10N60E-T1-GE3
SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3 Vishay Siliconix


sihj10n60e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 10A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 100 V
auf Bestellung 1217 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 5.61 EUR
100+ 4.46 EUR
500+ 3.78 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 4
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHJ10N60E-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 10A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 100 V.

Weitere Produktangebote SIHJ10N60E-T1-GE3 nach Preis ab 3.2 EUR bis 6.76 EUR

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SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 Hersteller : Vishay Semiconductors sihj10n60e.pdf MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 6135 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.76 EUR
10+ 5.64 EUR
100+ 4.47 EUR
250+ 4.13 EUR
500+ 3.74 EUR
1000+ 3.22 EUR
3000+ 3.2 EUR
Mindestbestellmenge: 8
SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 Hersteller : Vishay sihj10n60e.pdf Trans MOSFET N-CH 600V 10A 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SIHJ10N60E-T1-GE3 Hersteller : VISHAY SIHJ10N60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 89W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 89W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 313mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 Hersteller : Vishay Siliconix sihj10n60e.pdf Description: MOSFET N-CH 600V 10A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 100 V
Produkt ist nicht verfügbar
SIHJ10N60E-T1-GE3 Hersteller : VISHAY SIHJ10N60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 89W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 89W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 313mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar