SIHJ8N60E-T1-GE3
SIHJ8N60E-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 8A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SIHJ8N60E-T1-GE3
Description: MOSFET N-CH 600V 8A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8.
Preis SIHJ8N60E-T1-GE3 ab 3.56 EUR bis 5.98 EUR
 Hersteller: Vishay / Siliconix MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
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auf Bestellung 36 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Trans MOSFET N-CH 600V 8A 5-Pin(4+Tab) PowerPAK SO T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 600V 8A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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