auf Bestellung 995 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 10.71 EUR |
| 10+ | 9.98 EUR |
| 25+ | 8.84 EUR |
| 100+ | 7.93 EUR |
| 250+ | 7.7 EUR |
| 500+ | 7.12 EUR |
| 1000+ | 6.66 EUR |
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Technische Details SIHP068N60EF-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 41A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V.
Weitere Produktangebote SIHP068N60EF-GE3 nach Preis ab 6.55 EUR bis 12.69 EUR
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SIHP068N60EF-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 41A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHP068N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 41A 3-Pin(3+Tab) TO-220AB |
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| SIHP068N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 115A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 68mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP068N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 115A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 115A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 68mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |