SIHP080N60E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 838 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.17 EUR |
50+ | 8.04 EUR |
100+ | 6.89 EUR |
500+ | 6.13 EUR |
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Technische Details SIHP080N60E-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V.
Weitere Produktangebote SIHP080N60E-GE3 nach Preis ab 5.56 EUR bis 10.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||||||
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SIHP080N60E-GE3 | Hersteller : Vishay / Siliconix | MOSFET N-CHANNEL 600V |
auf Bestellung 7091 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP080N60E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHP080N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 35 A, 0.07 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 227W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 836 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP080N60E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 35A Tube |
Produkt ist nicht verfügbar |
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SIHP080N60E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 35A Tube |
Produkt ist nicht verfügbar |
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SIHP080N60E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 35A Tube |
Produkt ist nicht verfügbar |