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SIHP12N50C-E3

SIHP12N50C-E3 Vishay / Siliconix


sihp12n5.pdf Hersteller: Vishay / Siliconix
MOSFET N-Channel 500V
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.89 EUR
10+ 9.15 EUR
25+ 8.63 EUR
100+ 7.41 EUR
250+ 6.99 EUR
500+ 6.58 EUR
1000+ 5.62 EUR
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Technische Details SIHP12N50C-E3 Vishay / Siliconix

Description: MOSFET N-CH 500V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.

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SIHP12N50C-E3 SIHP12N50C-E3 Hersteller : Vishay sihp12n5.pdf Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220AB
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SIHP12N50C-E3 SIHP12N50C-E3 Hersteller : Vishay Siliconix sihp12n5.pdf Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar